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inchange semiconductor product specification 1 silicon npn power transistors 2SD2634 description ? ? with to-3pml package ? high speed ? high breakdown voltage ?high reliability ? built-in damper diode applications ? color tv horizontal deflection output pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 8 a i cm collector current-peak 20 a t c =25 ?? 65 p c collector power dissipation 3 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2634 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 800 v v cesat collector-emitter saturation voltage i c =4.5a;i b =0.9a 3 v v besat base-emitter saturation voltage i c =4.5a;i b =0.9a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 | a i ces collector cut-off current v ce =1500v ;r be =0 1.0 ma i ebo emitter cut-off current v eb =4v; i c =0 40 130 ma h fe-1 dc current gain i c =5a ; v ce =5v 5 8 h fe-2 dc current gain i c =1a ; v ce =5v 10 v f diode forward voltage i ec =7a 2 v t f fall time i c =3a;r l =66.7 |? i b1 =0.6a;-i b2 =1.2a;v cc =200v 0.3 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD2634 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SD2634

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